Publication

Effect of the Microstructure on the Electronic Transport in Hydrogenated Microcrystalline Silicon

Related publications (46)

Weyl metallic state induced by helical magnetic order

Henrik Moodysson Rønnow, Jan Hugo Dil, Ivica Zivkovic, Jian Rui Soh, Xupeng Yang

In the rapidly expanding field of topological materials there is growing interest in systems whose topological electronic band features can be induced or controlled by magnetism. Magnetic Weyl semimetals, which contain linear band crossings near the Fermi ...

Berlin2024

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Rajrupa Paul

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

EPFL2023

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3

Alfredo Pasquarello, Assil Bouzid

Formation energies of C, Si, and Ge defects in beta-Ga2O3 are studied through hybrid functional calculations. The interstitial defects of these elements generally occur at higher energies than their substitutional counterparts, but are more stable at low F ...

WILEY-V C H VERLAG GMBH2019

Stress mitigation for adhesively bonded photovoltaics with fibre reinforced polymer composites in load carrying applications

Thomas Keller, Yu Bai

Structural loads, especially in-plane compression, may cause local buckling and debonding of the photovoltaic (PV) cells that are mechanically integrated with structural members and this may lead to degradation in their electrical performance. This paper p ...

ELSEVIER SCI LTD2019

Topology-Driven Single-Molecule Conductance of Carbon Nanothreads

Ganna Gryn'ova

Highly conductive single-molecule junctions typically involve pi-conjugated molecular bridges, whose frontier molecular orbital energy levels can be fine-tuned to best match the Fermi level of the leads. Fully saturated wires, e.g., alkanes, are typically ...

AMER CHEMICAL SOC2019

Adjustable potential probes for band-gap predictions of extended systems through nonempirical hybrid functionals

Alfredo Pasquarello, Igor Reshetnyak, Thomas Bischoff

We describe a nonempirical procedure for achieving accurate band gaps of extended systems through the insertion of suitably defined potential probes. By enforcing Koopmans' condition on the resulting localized electronic states, we determine the optimal fr ...

2019

Anomalous Hall and Nernst Effects in Co2TiSn and Co2Ti0.6V0.4Sn Heusler Thin Films

Jean-Philippe Ansermet, Haiming Yu, Sa Tu, Junfeng Hu, Yao Zhang

Magnetotransport (magnetoresistance and anomalous Hall effect) and thermoelectric (Seebeck and anomalous Nernst effect) effects are investigated on epitaxially grown Co2TiSn and Co2Ti0.6V0.4Sn Heusler thin films. An anomalous Nernst coefficient up to 1.8 m ...

AMER PHYSICAL SOC2018

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

Alfredo Pasquarello, Assil Bouzid

We show that constant-Fermi-level ab initio molecular dynamics can be used as a computer-based tool to reveal and control relevant defects in semiconductor materials. In this scheme, the Fermi level can be set at any position within the band gap during the ...

Amer Physical Soc2017

Dynamics of ferroelectric 180 degrees domain walls at engineered pinning centers

Nava Setter

The interaction between domain walls and pinning centers in ferroelectrics is of great interest from both fundamental and practical points of view. In this work, we show that, counter to intuition, the apparent velocity of domain walls can increase as the ...

Amer Inst Physics2017

Oxygen defects in amorphous Al2O3: A hybrid functional study

Alfredo Pasquarello, Francesco Ambrosio, Zhendong Guo

The electronic properties of the oxygen vacancy and interstitial in amorphous Al2O3 are studied via ab initio molecular dynamics simulations and hybrid functional calculations. Our results indicate that these defects do not occur in amorphous Al2O3, due to ...

American Institute of Physics2016

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