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The Ge APD detectors are fabricated on Si by using a selective chemical-vapor deposition (CVD) epitaxial growth technique. A novel processing procedure was developed for the p+ Ge surface doping by a sequence of pure-Ga and pure-B depositions (PureGaB). Th ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012