Publication

Temperature dependence of the conductivity in large-grained boron-doped ZnO films

Abstract

The temperature dependence of the conductivity is investigated as a function of boron doping in large-grained, degenerate polycrystalline ZnO films prepared by low-pressure chemical vapor deposition. Carrier transport in undoped and lightly doped films is mainly controlled by the grain boundary; field emission through grain boundaries limits the conductivity below 90 K, while thermally activated thermoionic-field emission leads to an increase in the conductivity with the temperature near room temperature. In contrast, carrier transport in highly doped films is mainly governed by intra-grain scattering, which does not depend on the temperature for degenerate electron gases, limits the mobility below 120 K, whereas a metallic behavior (decrease in conductivity with increasing temperature) is observed at room temperature, which is linked to the ionized impurity scattering. The transition between the "semiconductor"-like and metallic-like behavior at room temperature takes place for a film with carrier concentration between 6×1019 and 9×1019 cm-3. © 2007 Elsevier B.V. All rights reserved.

About this result
This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.