High coupling materials for thin film bulk acoustic wave resonators

Janine Conde
EPFL, 2009
EPFL thesis

Abstract

Radio frequency (RF) filters based on bulk acoustic wave resonances in piezoelectric thin films have become indispensable components in mobile communications. The currently used material, AlN, exhibits many excellent properties for this purpose. However, its bandwidth is often a limiting factor. In addition, no tuning is possible with AlN. Ferroelectrics would offer both larger coupling to achieve larger bandwidths, and tunability. However, their acoustic properties are not well known, especially in the thin film case. The goal of this thesis is to investigate the potential and identify the limitations of ferroelectric thin films for thickness mode resonators in the 0.5 - 2 GHz range. The Pb(Zrx,Ti1-x)O3 (PZT) solid solution system is the main candidate, since it is known for its large piezoelectric constants and its growth is already well studied. As a main test vehicle, free standing thin film bulk acoustic resonator (TFBAR) structures with Pt/PZT/Pt/SiO2 membranes were successfully fabricated using silicon micro-machining techniques. The main drawback of ferroelectrics is the damping of acoustic waves by domain wall motion both in the RF electric field and in the pressure wave. For this reason films with varying orientations and compositions were investigated. From the device structures the electro-mechanical coupling constants kt2, the quality factors (Q-factors) and several materials parameters have been obtained. High coupling constants have been found for sol-gel Pb(Zr0.53,Ti0.47)O3 films with a {100} texture, kt2 is found to be 0.4 for a 1 µm thick film and 0.8 for a 3.8 µm thick film. However, the Q-factors of these films are low, 18 for the first film and 3 for the second film. The increase of kt2 and the decrease of the Q-factor with frequency indicates that the domains present in these films contribute to these characteristic parameters. It was generally observed that high coupling constant are associated to low Q-factors. This became evident when comparing films with 53/47 composition, where both tetragonal and rhombohedral phases are present, to tetragonal films as well as when comparing {100} textures with (111) textures. Both for the 53/47 composition and for the {100} texture, ferroelastic domain walls are thought to play a bigger role than for tetragonal compositions and (111) textures. The highest figure of merit (FOM) of about 15 was found when combining the composition leading to a high coupling constant (53/47) and the orientation leading to lower losses (111). However the losses even in this film are too high for RF-filter applications. On the other hand, films with low Q-factors but high coupling could prove very useful as transducers for ultrasonic imaging applications, where low Q-factors are desired. The stiffness coefficients of the studied PZT films were shown to be higher than expected from ceramics data. Most likely the stiffness of ceramics always contains domain contributions leading to softening. In contrast, in textured films the variety of domain orientation is very much reduced. In order to reduce losses due the presence of ferroelastic domains three different potential solutions were explored. The first idea was to manipulate the domain populations of the films deposited on silicon by using heat and vacuum treatments. Silicon substrates are known from previous works to be unfavourable for high c-domain fractions. It was discovered that an anneal in vacuum at 550 °C lead to a significant reduction of c-domains in tetragonal 30/70 PZT ({100}). On the contrary, if the sample was subjected to a compressive stress during cooling, the c-domain fraction could be increased. Analysis of the film stress versus temperature curves revealed a trend consistent with theoretical predictions, i.e. a phase boundary between the c/a/c/a and the a1/a2/a1/a2 domain patterns between room temperature and the Curie temperature θC. However, even though this method reveals interesting results, it can not be exploited as a method to achieve a sufficient c-domain population. The second idea explored was the implementation of a high thermal expansion material as a substrate. PZT films deposited on MgO are known to be compressive due to the difference in thermal expansion of the two materials. The compressive stress leads to highly c-axis oriented PZT films. Devices using MgO substrates were fabricated, however difficulties in the micro-machining of the MgO substrate inhibited a complete liberation of the membrane. Nevertheless, preliminary measurements indicate these devices could lead to both high coupling and high Q-factors, suggesting that further detailed study of this method is worthwhile. As a third method for avoiding ferroelastic domains, the uniaxial ferroelectric potassium lithium niobate (KLN) was explored. The unique ferroelectric axis in this material means that only 180° domain walls are present, which can theoretically be removed by poling. This material has been deposited in thin film form using pulsed laser deposition (PLD). KLN thin films with a {001} texture were deposited successfully on Pt/Si substrates. The films were piezoelectric with a d33,f value of around 10 pm/V and a dielectric constant of 250. This is the first time that piezoelectric properties were measured on KLN thin films. A columnar structure has been observed, however the small grain size and the rough surface currently make it difficult to apply this material to TFBAR's.

Official source

https://infoscience.epfl.ch/record/140338?ln=en

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related concepts

Related publications

Janine Conde
EPFL, 2009
EPFL thesis

Abstract

Official source

https://infoscience.epfl.ch/record/140338?ln=en

About this result

Related concepts (23)

Related concepts

Related publications (127)

Related publications

Pulsed laser deposition of (SrBa)Nb2O6 thin films and their properties

Anna Infortuna

Strontium barium niobate (SrxBa1-xNb2O6, shortly SBN) is a solid solution system with tetragonal tungsten bronze crystal structure. It exhibits a ferroelectric phase with only one polar axis and a transition temperature depending on the Sr/Ba ratio. This thesis studies the growth of SBN thin films, in order to obtain a ferroelectric thin film model system for the study of 180° domain switching close to the ferroelectric phase transition. SBN has been chosen not only because uniaxial, but because it is possible to tune the temperature of phase transition varying the Sr/Ba ratio. It is thus possible to study electric properties of the phase transition close to room temperature, where conduction phenomena related to defects are normally lower. Thin films of SBN were grown by Pulsed Laser Deposition in a vacuum system constructed during this thesis work. For the formulation of a model it is desirable to have a system as close as possible to a single crystal. Therefore deposition parameters have been optimized to grow SBN thin films with the polar axis oriented perpendicular to the film plane. The films are integrated in parallel plate capacitor structures, in order to measure dielectric properties. The stability of the ferroelectric phase is found to be sensitive to impurities; contaminants with concentration below 1% induce a lowering of the transition temperature of about 100°C. Strain as well has influence on the phase transition; in the case of substrate with thermal expansion coefficients different from the SBN ones, the SBN film is under stress. A 0.6% tensile strain induces a lowering of the transition temperature of about 100°C, this is the case of silicon single crystal substrate. Grown on strontium titanate single crystals (STO), whose thermo-mechanical properties are close to the one of SBN, the films exhibit a phase transition temperature compatible with the one measured on single crystals. The obtained films suffer from leakage that is reduced by thermal treatment in oxygen rich atmosphere. The oxygen vacancies, created during the deposition process, are considered to be responsible of leakage. Vacancies recovery upon annealing does not eliminate the problem, and measurement of polarization at room temperature is difficult. However, piezoelectric measurements performed on individual grains, with atomic force microscope, prove that these have ferroelectric properties; by these experiment has been proved that it is possible to switch the polarization. Films with a disordered structure of grains are much less leaky than the ones with columnar grains spanning the whole cross section. These observations lead to the conclusion that conduction goes trough the grain boundaries. On STO single crystals, SBN grows epitaxial in Volmer-Weber mode. With a suitable preparation of the substrate surface, it is possible to induce the growth of films with different orientations of the polar axis: in the film plane, perpendicular to it or inclined of 45°. A model is proposed, explaining the epitaxial relation with the substrate on the basis of the perovskite kernel contained in the unit cell of the tetragonal tungsten bronze structure. The film grows from the nucleation of the perovskite structure that rules the orientation of the film; the high temperature at which the substrate is kept during the deposition, assure the necessary mobility for the arriving atoms to organize in the SBN structure around these nuclei. The study of literature data allows to state that such a model is valid not only for substrates with perovskite structure, but can be extended to substrates with a cubic crystal structure, like magnesium oxide.

EPFL2005

Properties and phase transitions in lead free piezoelectrics

Naama Klein

Piezoelectric materials are used in a wide range of applications, with lead zirconate titanate (PZT) ceramics being the dominant family of materials, due to high piezoelectric coefficients, dielectric permittivity and coupling factors. The high properties have been found in compositions in the proximity of a morphotropic phase boundary (MPB). The MPB exhibits a weak temperature dependence so that the stability of the properties is attained over a large temperature range. However, environmental problems rising from the toxicity of lead have driven scientists around the world to search for lead free piezoelectric materials. These new materials should exhibit properties comparable to those of PZT and the efforts are at the present concentrated on solid solutions with an MPB. In this thesis an emphasis was made on constructing the phase diagrams and detecting an MPB in two of the most promising families of lead-free solid solutions: bismuth sodium titanate based and potassium sodium niobate based ceramics and single crystals. By investigating the structure of the phases, using X-ray and neutron diffractions and Raman spectroscopy, and measuring the dielectric and piezoelectric properties at temperatures from -266 °C to 550 °C, the phase transitions were assigned and phase diagrams constructed. Both systems (1-x)(Bi0.5Na0.5)TiO3-xBaTiO3 (0 ≤ x ≤ 0.09) (BNBT) and (1-x)(K0.5Na0.5)NbO3-xLiNbO3 (0.02 ≤ x ≤ 0.1) (KNLN), reveal similar MPBs to the one found for PZT. However, in PZT the MPB is pseudovertical up to about 350 °C whereas the MPB in BNBT is vertical only till 75 °C and in KNLN is till -50 °C. This difference in the temperature stability range is crucial in most applications. Other interesting findings in the BNBT phase diagram correspond to the phase sequence at the temperature range from 200 to 300 °C, where ferroelectric phase transforms into a mixed phase (antiferroelectric or paraelectric) with polar regions. As temperature rises, the polar regions gradually disappear. Whereas dielectric and piezoelectric properties of BNBT could compete with those of PZT in some compositions, and fairly simple processing of the ceramics is used, the fabrication of KNLN ceramics has shown to be complex and reproducible properties difficult to obtain. Even after the critical processing conditions were identified in this thesis, and reproducibility was achieved, properties were significantly lower than for PZT. Exceptional values of the thickness coupling coefficients were measured on potassium niobate (KN) and KNLN single crystals rotated away from the Z axis by θ = 45° about the orthorhombic Y axis, [001]C-cut. Monodomain and domain-engineered single crystals cut at this angle showed very high coefficients (kt ≤ 70%), which are extremely stable over a large temperature range and after thinning to thickness below 60 µm. Together with low permittivity, these properties make KN single crystals a good candidate for high-frequency applications. The higher permittivity of KNLN makes it an attractive crystal for applications at lower frequencies. Another possible application of lead free piezoelectrics could be in biological systems. For this reason, preliminary in-vitro biocompatibility study of KNLN and PZT ceramics was conducted, showing similar microscopic attachment of cells to the two ceramics and slightly lower viability values when compared to non coated tissue culture plates. Laboratory attempts to introduce KNLN ceramics as an implant in the mineral of the bone, hydroxyapatite (HA), ended with a strong chemical reaction between the two. However, some piezoelectric response could be measured from the composite of HA and KNLN.

EPFL2009

Since the prediction of antiferroelectricity and the subsequent discovery of PbZrO3, the description of antiferroelectric behaviour in materials has been constantly modified to account for the latest properties identified in antiferroelectric materials. Adding to this refinement, the current study considers Lead Zirconate (PbZrO3) as a prototypical antiferroelectric and through it, aims to understand the origin of antiferroelectricity, and the possibility of localised ferroelectric behaviour inside the material. The observation and control of the occurence of such localised ferroelectricity is attempted and the mechanical behaviour of such ferroelectric structures is simulated. Antiferroelectrics are defined as materials which undergo a phase transition from one centrosymmetric phase to another while being accompanied by a dielectric anomaly at the transition. The origin of antiferroelectricity as observed in the prototypical antiferroelectric PbZrO3, involves multiple lattice instabilities with interactions that remained only partially deciphered. The current study provides for an explanation of the lattice dynamics occuring in PbZrO3 through results obtained from a combination of scattering techniques such as Inelastic XRay, Thermal Diffused and Brillouin scattering. The primary structural instability associated with the antiparallel lead displacements is seen to be coupled with the ferroelectric order parameter, and to the order parameter related to the oxygen octahedral rotations. On the appearance of the structural order parameter, these interactions result in the formation of the antiferroelectric phase of PbZrO3 as known previously. The premises for such interactions and their validations are provided, while explaining all aspects associated with the antiferroelectric phase transition occuring in PbZrO3 including the dielectric anomaly. One significance of the scenario with competing order parameters lies in the possible appearance of the subdued order parameters in regions where the primary order parameter is absent. The conditions for the disappearance of this order parameter in the case of PbZrO3 is discussed, and structural domain boundaries are shown to be potential regions for the local observation of otherwise subdued ferroelectricity. Aimed at the observation of localised ferroelectric structures in an otherwise antiferroelectric material, growth of epitaxial thin films of PbZrO3 is undertaken using Pulsed Laser Deposition. The growth parameters are varied to control the crystalline orientation and the defect concentration in the films through the control of the interfacial strain. In this process, a technique for the tunable variation of the epitaxial strain using a single composition buffer layer has been documented. The antiferroelectric films are then utilised for the observation of regions of disrupted symmetry, for the observation of localised ferroelectricity. The distribution of such regions in the thin films, as well as the anomalous interaction of different types of domain walls with crystalline defects are observed and analysed. Alongside, the response of such localised ferroelectric structures to external electric fields is simulated. The conditions necessary for sufficiently large displacements of such structures, large enough for potential observation using Scanning Probe Microscopy techniques, have been listed.

EPFL2015