Properties and phase transitions in lead free piezoelectrics
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Strontium Bismuth Titanate is a very promising material for high temperature piezoelectric applications, its elevated ferroelectric phase transition (530°C), linear piezoelectric properties under low field and relatively low room temperature conductivity ( ...
Using a serial bilayer model we show that heterogeneous ferroelectric systems may exhibit substantial Maxwell-Wagner piezoelectric relaxation. The relaxation has its origin in the coupling of the dielectric and piezoelectric properties. The model predicts ...
The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak a ...
The macroscopic properties of ferroelectric materials depend directly on the domain configuration and the structure of the domain boundaries. For this reason, their study is of great scientific and technological interest. Several models have been developed ...
Pb(Zr, Ti)O-3 (PZT) and Pb(Zr, Ti, Nb)O-3 (PNZT) thin films have been deposited on platinized silicon substrates by sputtering followed by a postannealing treatment. The Nb concentration in the films varied between 1 and 7 at. % with increments of 1 at. %. ...
Pb(Mg1/3Nb2/3)O-3 thin films were prepared from modified alkoxide solution precursors and their dielectric and electromechanical characteristics were investigated. Preparation of the films is very sensitive to processing parameters. The influence of differ ...
A Landau-Ginsburg-Devonshire-type thermodynamic theory is used to describe equilibrium single-domain states and phase transitions in epitaxial ferroelectric thin films. For BaTiO3 and PbTiO3 films grown on cubic substrates, the paraelectric to ferroelectri ...
The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak a ...
A phenomenological thermodynamic theory of ferroelectric thin films epitaxially grown on cubic substrates is developed using a new form of the Gibbs function, which corresponds to the actual mechanical boundary conditions of the problem. It is found that t ...
A phase diagram based on dielectric-permittivity-versus-temperature measurements and high-temperature X-ray diffractometry was proposed for 0.4Pb(Ni-1/3,Nb-1/3) O-3-xPbZrO(3)-(0.6-x)PbTiO3, (0.2 less than or equal to x less than or equal to 0.32) relaxor-f ...
