Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices
Related publications (58)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
We discuss the structural, electronic and dielectric properties of a model structure of the Si(100)-SiO2 interface that accounts for the amorphous nature of the oxide. After showing that the structural properties of this model are consistent with a variety ...
We investigate the equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon. Through the use of a first-principles approach, we map the profile of the local permittivity across two interface models showing different suboxid ...
We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...
We develop a theory for investigating atomic-scale dielectric permittivity profiles across interfaces between insulators. A local susceptibility chi(x;omega) is introduced to describe variations of the dielectric response over length scales of the order of ...
The occurrence of an ultrathin SiO2 oxide layer at the interface between silicon and high-k dielectrics in metal-oxide-semiconductor devices contributes to degrading the capacitance of the gate stack. In this work, we investigate the dielectric and infrare ...
We investigate the dielectric screening across the Si-SiO2 interface using a first-principle approach. By determining the profile of the microscopic polarization and the effective polarizabilities of SiOn (n = 0,..4) structural units, we show that the vari ...
We discuss various decomposition schemes for analysing the dielectric constants of Zr silicates in terms of local properties. Such schemes serve the purpose of predicting the dielectric constants of amorphous alloys, when their system size precludes the po ...
The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discus ...
We present the results of our calculation of the effects of dynamical coupling of a charge carrier to the electronic polarization and the field-induced lattice displacements at the gate interface of an organic field-effect transistor (OFET). We find that t ...
During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interfacial layer (IL) containing SiOx between high-k dielectric and Si substrate is almost unavoidable. However, an Al(CH3)(3) (TMA) pretreatment for 3600 s on H ...