High-rate deposition of microcrystalline silicon in a large-area PECVD reactor and integration in tandem solar cells
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Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added. A dark conductivity of 1.6×10-8 S/cm and an activation energy of 0.62 eV are obtai ...
Negative ions have been clearly identified in silane rf plasmas used for the deposition of amorphous silicon. Mass spectra were measured for monosilicon up to pentasilicon negative ion radical groups in power-modulated plasmas by means of a mass spectromet ...
The cavity ring-down technique is applied to an industrial-scale radio-frequency (rf) plasma reactor for the measurement of the density and spatial profile of negative ions in pure oxygen and hydrogen rf plasmas, and for the detection of nanometric particl ...
Partial-depth modulation of the rf power in a capacitive discharge is used to investigate the relative importance of negative ions and neutral radicals for particle formation in low-power low-pressure silane plasmas. For less than 85% modulation depth, ani ...
The electronic properties of amorphous and ion-implanted polycrystalline SnO2 films have been studied using x-ray photoemission spectromicroscopy. First, we analysed the degree of oxidation and the homogeneity of as-deposited films. The SnO and SnO2 phases ...
Particulate contamination produced during plasma-assisted deposition of amorphous silicon devices can be responsible for reduced quality and yield. The threshold for powder formation imposes an upper limit on the radio frequency (rf) power and hence the de ...
Using the new 'quality parameter', μoτo, the authors were able to show, for the first time, a clear correlation between transport properties of a series of a-Si:H films (grown at various deposition temperatures) and the efficiency of p-i-n cells incorporat ...
The influence of Ta, Ti and TiO2 adhesion layers with Pt bottom electrodes and the deposition temperature of the metallization on the nucleation and growth of sol-gel derived Pb(Zr0.53Ti0.47)O-3 thin films is reported. Several different PZT annealing profi ...
Thin Cu layers were prepd. via MOCVD from volatile pyrazolylboratoCu(I) complexes. Expts. involved CVD in a low pressure reactor between 150-350 Deg in H2/N2/He mixts. were carried out. Substrate temp., source temp. and gas compn. were varied to obtain the ...
We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. ...
