Impact of secondary gas-phase reactions on microcrystalline silicon solar cells deposited at high rate
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The formation of sub-micron sized particulates has been studied in a low pressure (0.1 mbar) radio-frequency (13.56 MHz) capacitively coupled plasma discharge. Particles are studied in situ by infrared absorption spectroscopy, laser illumination and Cavity ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to powder formation, a new type of material, consisting of an amorphous matrix in which silicon nanocrystallites are embedded is obtained. This mate ...
Particle contamination formed in reactive plasmas imposes an upper limit on the rate for particle-free deposition. Conversely, these plasmas could be exploited to produce nanometric clusters and particles for various applications. Infrared absorption spect ...
Mat. Res. Soc. Symp. Proc. Vol. 507, Materials Research Society1998
In situ Fourier transform infrared absorption spectroscopy has been used to study the composition of particles formed and suspended in radio-frequency discharges of silane-oxygen-argon gas mixtures. The silane gas constumption was observed by infrared abso ...
The optical emission spectroscopy technique is used to characterise the temporal behaviour of a pure silane plasma in the first 90 s after ignition of a static closed-chamber very high frequency glow discharge. Special interest is drawn to the formation of ...
In situ Fourier transform infrared (FTIR) absorption spectroscopy has been used to determine the fractional depletion of silane in a radio-frequency (ri) glow discharge. The technique used a simple single-pass arrangement and was implemented in a large-are ...
Boron nitride films were deposited by r.f. capacitively-coupled plasma (13.56 MHz) using two different gas mixtures: Ar-B2H6-NH3 and Ar-B2H6-N-2. In order to study the gas-phase reactions of the plasma in situ Fourier transform infrared absorption spectros ...
A fast and sensitive method for measurement of spectral dependence of the optical absorption coefficient α(E) in thin films of photosensitive materials is introduced. A Fourier transform infrared (FTIR) spectrometer is used with a photoconductive sample as ...
We investigate the hydrogen related bonding structure in hydrogenated polymorphous silicon films (pm-Si:H) and hydrogenated microcrystalline silicon. Infra-red spectra reveal some new features for both kinds of films. namely new modes appearing in the stre ...
We have studied ultrafast dynamics of photoexcited carriers in μc-Si:H by pump and probe laser spectroscopy. We have found that the dynamics of photoexcited carriers in μc-Si:H depend on the crystallinity of the material: in the samples with low crystallin ...