GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment
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We have studied the electrical characteristics of p‐GaAs/n‐Si (100) heterojunction diodes grown by molecular beam epitaxy in an effort to determine the interface polarity. A Ga or As pre‐exposure was used prior to the growth of p‐GaAs on n‐Si substrates to ...
Characterization of impurety diffusion induced disordering in GaAs/AlGaAs multiquantum well structures, grown by molecular beam epitaxy, has been carried out by scanning electron microscopy. ...
