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Small signal modeling of charge and piezoresistive modulations in active MEM resonators

Related publications (33)

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Oscillator Based on Suspended Gate MOS Transistors

Mihai Adrian Ionescu, Marco Mazza, Yogesh Singh Chauhan, Alexandru Rusu

The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...

2008

Magnetic field sensor for measuring direction of a magnetic field in a plane

Radivoje Popovic, Pavel Kejik

A magnetic field sensor for measuring a direction of a magnetic field in a plane comprises a sensing structure (4) comprising a ring-shaped well (10), a plurality of contacts (11) of equal size placed at equal distance from each other along the ring-shaped ...

2008

A Compact and Low-Power CMOS Circuit for Fully-Integrated NEMS Resonators

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

This brief presents a fully integrated nanoelectromechanical system (NEMS) resonator, operable at frequencies in the megahertz range, together with a compact built-in CMOS interfacing circuitry. The proposed low-power second-generation current conveyor cir ...

2007

ASIC for High-Speed-Gating and Free Running Operation of SPADs

Yusuf Leblebici, Alexandre Pauchard, Alexis Rochas, Grégoire Ribordy

Single photon detection at telecom wavelengths is of importance in many industrial applications ranging from quantum cryptography, quantum optics, optical time domain reflectometry, non-invasive testing of VLSI circuits, eye-safe LIDAR to laser ranging. In ...

2007

Fading memory and kernel properties of generic cortical microcircuit models

Henry Markram

It is quite difficult to construct circuits of spiking neurons that can carry out complex computational tasks. On the other hand even randomly connected circuits of spiking neurons can in principle be used for complex computational tasks such as time-warp ...

2004

Hybrid CMOS-SET devices and circuits

Santanu Mahapatra

The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...

EPFL2004

A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits

Christian Enz

Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be ad ...

2000

An integrated inductive proximity sensor

Inductive proximity sensors are widely used for the contactless measurement of object or target displacement and position in numerous technical products and systems. They are found in various application domains such as transportation, robots, assembly lin ...

EPFL1999

Convexity of Resistive Circuit Characteristics

Martin Hasler, Chao Wang

We give topological criteria for the convexity and the concavity of a current or a voltage in a resistive circuit, as a function of a source voltage or current, when the nonlinear resistor characteristics are all either convex or concave. When the criteria ...

1997

Design of a novel thin-film piezoelectric accelerometer

Nava Setter, Paul Muralt

A novel piezoelectric thin-film accelerometer has been designed and its performance has been analysed. The piezoelectric thin film (PZT for example) is delineated into an array of pads to reduce the sensor capacitance. By filling the cavity around the PZT ...

1996