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Modeling and Characterization of Three Kinds of MEMS Resonators Fabricated with a Thick Polysilicon Technology

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The Vibrating Body Transistor

Mihai Adrian Ionescu, Daniel Grogg

This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improved motion sensing ...

2011

AIN Thin Film Structures for High-Q Resonators

Alvaro Artieda

The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...

EPFL2010

Active Microelectromechanical Resonator

Daniel Grogg

The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...

EPFL2010

Epitaxial piezoelectric MEMS on silicon

Nico de Rooij, Danick Briand, Pattanaphong Janphuang, Don Isarakorn

This paper reports on the microfabrication and characterization of piezoelectric MEMS structures based on epitaxial Pb(Zr0.2Ti0.8)O-3 (PZT) thin films grown on silicon wafers. Membranes and cantilevers are realized using a sequence of microfabrication proc ...

Institute of Physics2010

Switchable bandpass filter for WiFi-UMTS reception standards

Julien Perruisseau-Carrier

A reconfigurable bandpass filter able to switch between WiFi and UMTS reception standards is presented. The topology allows achievement of two accurate centre frequencies, each associated with a precisely defined bandwidth, using six pin diodes. The design ...

Institution of Engineering and Technology2010

Nanogap MEM resonators on SOI

Nicoleta-Diana Ciressan

Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...

EPFL2009

Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films

Andreas Nöth

Thin Film Bulk Acoustic Wave Resonators (TFBARs) had been developed a decade ago and since then were implemented extensively in mobile communications devices. The "heart" of a TFBAR consists of a piezoelectric film that operates as an acousto-electric tran ...

EPFL2009

Bulk-source-coupled CMOS Quadrature Oscillators

Pierre-André Farine, Cyril Botteron, Uroschanit Yodprasit, Paul Saad

A quadrature oscillator based on a coupling between the bulk and the source of MOS transistors is proposed. Since the resonator load is not directly involved in the coupling process, the oscillation frequency is very close to the resonant frequency, hence ...

Institution of Engineering and Technology2009

9 MHz vibrating body FET tuning fork oscillator

Mihai Adrian Ionescu, Maher Kayal, Daniel Grogg, Fabrizio Lo Conte

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

Nicolas Abelé

Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...

EPFL2007