High-occupancy effects and stimulation phenomena in semiconductor microcavities
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The influence of biexciton formation on the four-wave-mixing response of multiple quantum wells having a strong inhomogeneous broadening of the exciton transitions has been investigated. The experimental results are consistent with a model which distinguis ...
Raman spectroscopy has been used to measure phonons in GaAs v-groove quantum wire structures containing (001) and (111) GaAs/AlAs superlattice barrier regions. Resonance enhancement permits the identification of modes in different regions of the structure, ...
A quantum-mechanical model for quantum well polaritons in semiconductor microcavities is presented. The real and imaginary parts of the polariton dispersion are obtained. They represent, respectively, the position and the linewidth of the luminescence peak ...
The polariton Hamiltonian for a quantum well embedded in a cavity of finite width is derived. The exciton-light interaction is formulated in second quantization and the photon self-interaction term A2 is included. The importance of the A2 term turns out to ...
We report on a transparent analysis of the luminescence spectra of dense electron-hole plasmas confined in GaAs/(Ga,Al)As quantum wells. We fit the spectra using the fact that the total number of particle states does not depend on collision broadening. Fur ...
Polaritons in confined systems are introduced and their dispersion is calculated. The amount of squeezing of confined excitons polaritons in GaAs quantum wells is evaluated. ...
A procedure for calculating the resonance width of a state degenerate with a continuum is proposed. It is based on a diagonalization of the Hamiltonian on a finite variational basis followed by application of the Fano theory on the resulting eigenstates. T ...