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Low temperature irradiation experiments show a remarkable contrast between Si and Ge. suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences. (C) 2008 Elsevier B.V. All rights reserved.
Alfredo Pasquarello, Hannu-Pekka Komsa
Robin Schäublin, Amuthan Ramar, Anna Prokhodtseva