Er-doped Al2O3 thin films deposited by high-vacuum chemical vapor deposition (HV-CVD)
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The photothermal laser induced CVD of Cu from its hexafluoroacetylacetonate trimethylvinylsilane deriv. was studied as a function of added H2O vapor pressure. The height, width, elec. cond., and chem. compn. of the deposited Cu lines are measured. Under an ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...
We present experimental evidence of a previously unknown aluminum oxidation state due to chemisorbed atomic oxygen. This new oxidation state has been detected at room temperature on the chemically shifted Al 2p core level by photoemission spectroscopy. The ...
The low pressure chem. vapor deposition (LPCVD) of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates partially covered with a Pt seeding layer. With a known concn. of water vapor in the gas mixt., almost equal Cu film growth r ...
A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pre ...
It is now generally recognized that the excitation frequency is an important parameter in radio-frequency (rf) plasma-assisted deposition. Very-high-frequency (VHF) silane plasmas (50-100 MHz) have been shown to produce high quality amorphous silicon films ...
The selectivity of Cu deposition from bis(hexafluoroacetylacetonato)Cu(II) on SiO2 patterned with a Pt seeding layer was studied as a function of the reagent gas mixt. On Pt, the Cu film growth rate increases with the amt. of H2O vapor in the gas flow, and ...
The low-pressure chem. vapor deposition of copper and platinum was studied on SiO2 substrates which had been locally prenucleated with ultrathin metal layers of Pt, Cu, Pd, Au, and W. These layers were between 0.1 and 30 .ANG. thick and were produced by va ...
The microstructure and chemical composition of sputtered thin films are strongly correlated with the deposition conditions. In the present work, we report the investigation of the film composition by electron probe microanalysis and photoemission experimen ...
