Broadband Dielectric Response in Hard and Soft PZT
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The effects of donor (Nb, Ta) and acceptor (Na, Mg, Fe) dopants on the crystallization mechanism of PZT thin films were investigated. The parameters which control microstructure development were found to be different for donors and accepters. Lead stoichio ...
The ac field dependence of dielectric and piezoelectric response of sol-gel derived Pb(Zr,Ti)O(3)thin films is presented. The nonlinear response of dielectric polarisation and piezoelectrically induced strain at sub-switching fields was studied in terms of ...
Mechanisms of polarization switching and fatigue in (Pb, La)(Zr, Ti)O-3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found th ...
The ac field dependence of dielectric response of sol-gel derived Pb(Zr, Ti)O-3 thin films is presented. The analysis of amplitude and phase angle of first and third harmonic of the polarization at subswitching fields shows that a description of the dielec ...
In situ reactively sputter deposited, 300-nm-thick Pb(Zrx,Ti1-x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2). X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements ...
It was recently suggested, basing on the analysis of a wide range of macroscopic experimental results([1-4]), that fatigue in ferroelectric thin film capacitors, particularly in the case of PZT with metallic electrodes (Pt), must be related to the freezing ...
The effect of acceptor (Na, Mg, Fe) and donor (Nb,Ta) dopants on the switching properties of Pb(Zr0.53Ti0.47)O-3 (PZT) thin films with Pt electrodes was investigated for broad dopant concentration ranges. The effect of dopants on endurance was found to be ...
The most significant advance in this field in the past year has been the demonstration that single-crystal langasite, La3Ga5SiO14, can be used, at least at high frequencies, at temperatures up to 1000 degrees C. New evidence suggests that domain-wall contr ...
A Landau-Ginsburg-Devonshire-type thermodynamic theory is used to describe equilibrium single-domain states and phase transitions in epitaxial ferroelectric thin films. For BaTiO3 and PbTiO3 films grown on cubic substrates, the paraelectric to ferroelectri ...
The contribution of domain walls to the dielectric permittivity of ferroelectrics is customarily explained by the model of locally pinned walls. Here we analyze the complementary case and calculate wall contribution to permittivity of a sample in which 180 ...