Growth rates and electrical conductivity of microscopic ohmic contacts fabricated by laser chemical vapor deposition of platinum
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The rate of cw photolytic laser chem. vapor deposition (LCVD) of Pt was measured for l = 350 nm as a function of light intensity and metalorg. vapor pressure. The growth of the metal films was studied in situ and in real time by monitoring optical transmis ...
Microscopic ohmic contacts are made by laser chem. vapor deposition of platinum on a Pyrex substrate. The elec. cond. of the deposited metal stripes is measured as a function of the laser power, the writing speed, and the organometallic vapor pressure. The ...
The selectivity of Cu deposition from bis(hexafluoroacetylacetonato)Cu(II) on SiO2 patterned with a Pt seeding layer was studied as a function of the reagent gas mixt. On Pt, the Cu film growth rate increases with the amt. of H2O vapor in the gas flow, and ...
The photothermal laser-induced chem. vapor deposition of Cu was studied as a function of the writing speed, the light intensity, and the diam. of the focal spot on the substrate, at three different pressures of the Cu bishexafluoroacetylacetonate precursor ...
Intrinsic stress measurements were carried out on hydrogenated amorphous silicon (a-Si:H) films deposited with different excitation frequencies (13.56-70 MHz), by plasma-enhanced chemical vapor deposition. It was observed that films deposited at 70 MHz hav ...
The low pressure chem. vapor deposition (LPCVD) of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates partially covered with a Pt seeding layer. With a known concn. of water vapor in the gas mixt., almost equal Cu film growth r ...
Laser chem. vapor deposition (LCVD) of Pt from Pt bishexafluoroacetylacetonate was studied. The elec. cond. of the metallic deposit was investigated as a function of the writing speed, the vapor pressure of the organometallic compd., and the laser power at ...
A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pre ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...
