Control of LPCVD ZnO growth modes for improved light trapping in thin film silicon solar cells
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a-Si:H i-layers were deposited at different substrate temperatures and plasma excitation frequencies, while the other deposition parameters were kept constant. These layers were characterised by measuring the intrinsic mechanical stress and the defect dens ...
Nanocryst. solar cells were made by incorporation of cis-dithiocyanato-bis(2,2'-bipyridyl-4,4'-dicarboxylate) ruthenium (II) into sputter deposited titanium oxide films. After a pyridine treatment, it was possible to achieve a photoelec. conversion efficie ...
Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added. A dark conductivity of 1.6×10-8 S/cm and an activation energy of 0.62 eV are obtai ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to the formation of powder, a new type of material, called hydrogenated polymorphous silicon (pm-Si:H) is obtained. This material has increased tran ...
A review with 20 ref. Ti oxide films were made by reactive DC magnetron sputtering onto elec. conducting glass substrates. The films were dye sensitized with an Ru complex, thereby yielding nanocryst. solar cells. We investigated the microstructure of the ...
We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. ...
