Publication

Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Related publications (32)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Graph Chatbot

Chat with Graph Search

Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Resistive interlayer for improved performance of thin film silicon solar cells on highly textured substrate

Ultra-high quality surface passivation of crystalline silicon wafers in large area parallel plate reactor at 40 MHz

Stretched-exponential a-Si:H/c-Si interface recombination decay

Understanding of passivation mechanism in heterojunction c-Si solar cells

Plasma Modelling and Diagnostics for the Prediction of Structural Changes in Silicon Thin Film Deposition Plasma Modelling and Diagnostics for the Prediction of Structural Changes in Silicon Thin Film Deposition

Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon

Interface structure between silicon and its oxide by first-principles molecular dynamics

Enhanced Optical Absorption in Microcrystalline Silicon