Publication

Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case

Related publications (132)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case

Graph Chatbot

Chat with Graph Search

Tailoring band gaps of insulators by adsorption at surface defects: Benzoic acids on NaCl surfaces

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces

Band offsets at the Si/SiO2 interface from many-body perturbation theory

Defect energy levels in density functional calculations: Alignment and band gap problem

Defect levels of dangling bonds in silicon and germanium through hybrid functionals

Charge state of the O-2 molecule during silicon oxidation through hybrid functional calculations

Effect of improved band-gap description in density functional theory on defect energy levels in alpha-quartz

First principles investigation of defects at interfaces between silicon and amorphous high-kappa oxides

Alignment of hydrogen-related defect levels at the Si-SiO2 interface