Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
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Thin boron-doped diamond films were prepd. by HF CVD (hot filament chem. vapor deposition technique) on conductive p-Si substrate (Si/diamond). The morphol. of these Si/diamond electrodes was investigated by SEM and Raman spectroscopy. The electrochem. beh ...
There is a need for chemically resistant coatings that protect the exposed surface of microfluidics components. Pinhole free films with low stress and a good uniformity on flat and inclined surfaces are required. In this study, amorphous silicon carbide (S ...
Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates (similar to1 m(2)) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, a ...
The optical emission spectroscopy technique is used to characterise the temporal behaviour of a pure silane plasma in the first 90 s after ignition of a static closed-chamber very high frequency glow discharge. Special interest is drawn to the formation of ...
A combined PVD/PECVD process for the vacuum deposition of titaniumcontainingamorphoushydrogenatedcarbonfilms is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-t ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to the formation of powder, a new type of material, called hydrogenated polymorphous silicon (pm-Si:H) is obtained. This material has increased tran ...
Nanocryst. TiO2-based films with a special penniform microstructure were prepd. by reactive d.c. magnetron sputtering followed by dye sensitization. The films were integrated in a solar cell configuration and were able to yield a higher photocurrent than s ...
The anodic oxidn. of H2SO4 to H2S2O8 was investigated on B-doped synthetic diamond electrodes obtained by hot filament chem. vapor deposition. High current efficiency for H2S2O8 formation can be achieved in concd. H2SO4 (7.5 mol dm-3) and using high curren ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder, a new type of material, named polymorphous silicon (pm-Si:H) is obtained. pmSi:H exhibits enhanced transport pro ...
B-doped diamond films were deposited by large-area hot filament chem. vapor deposition (HFCVD) on Si and different industrial electrode materials, such as Ti, Zr, Nb, Ta, W, and graphite, with areas up to 50 * 60 cm2. B-doping levels ranging from 50 to sev ...