Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
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Intrinsic stress measurements were carried out on hydrogenated amorphous silicon (a-Si:H) films deposited with different excitation frequencies (13.56-70 MHz), by plasma-enhanced chemical vapor deposition. It was observed that films deposited at 70 MHz hav ...
We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. ...
The selectivity of Cu deposition from bis(hexafluoroacetylacetonato)Cu(II) on SiO2 patterned with a Pt seeding layer was studied as a function of the reagent gas mixt. On Pt, the Cu film growth rate increases with the amt. of H2O vapor in the gas flow, and ...
A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pre ...
Pyrolytic and photolytic laser chem. vapor deposition of Cu, Pt, Ga, and Sn was studied for the prodn. of low-resistance ohmic contacts of very small dimensions. ...
Similarities and differences in the structure and shape of the metallic deposit were studied for photolytic and pyrolytic laser-induced chem. vapor deposition of Sn and Pt. The photolytically deposited thin metallic films appear to be more homogeneous and ...
The low pressure chem. vapor deposition (LPCVD) of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates partially covered with a Pt seeding layer. With a known concn. of water vapor in the gas mixt., almost equal Cu film growth r ...
The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...
Particulate contamination produced during plasma-assisted deposition of amorphous silicon devices can be responsible for reduced quality and yield. The threshold for powder formation imposes an upper limit on the radio frequency (rf) power and hence the de ...
The photolytic laser chem. vapor deposition (LCVD) rate of Pt from its hexafluoroacetylacetonate complex precursor was measured in situ and in real time. Optical transmission of the 350 nm photolysis light through the deposited Pt film and a transparent gl ...
