Enhancement of microcrystalline n-i-p solar cell performance via use of pre-covering layers and H-2 treatment
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Time-of-flight secondary ion mass spectrometry (ToF-SIMS) imaging is employed to characterize the surface of patterned noble metal (Pt) and titania (TiO2) thin films deposited on oxidized silicon wafers. ToF-SIMS is used to follow the different process ste ...
Hydrogenated microcrystalline silicon prepared at low temperatures by the glow discharge technique is examined here with respect to its role as a new thin-film photovoltaic absorber material. XRD and TEM characterizations reveal that microcrystalline silic ...
Microcrystalline silicon (μc-Si:H) layers deposited by the very high-frequency-glow discharge technique at a radio-frequency excitation of 70 MHz are observed to be basically slightly 〈n〉 type. By doping (so-called]] microdoping") with boron in the gas pha ...
The effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multilayered structures are investigated by secondary-ion-mass spectrometry and photoluminescence measurements. Zn diffusions are performed at 575 degrees C into Si-doped, Be-dop ...
After Zn diffusion into Si-doped GaAs (n almost-equal-to 1.5 X 10(18) cm-3), the Zn-diffused samples are annealed under different conditions: (i) in vacuum, (ii) in arsenic vapor, and (iii) with a Si3N4 mask capping the sample surface. The Zn concentration ...
A fast and sensitive method for measurement of spectral dependence of the optical absorption coefficient α(E) in thin films of photosensitive materials is introduced. A Fourier transform infrared (FTIR) spectrometer is used with a photoconductive sample as ...