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Physics-based compact model for ultra-scaled FinFETs

Related publications (33)

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FinFET integrated low-power circuits for enhanced sensing applications

Mihai Adrian Ionescu, Antonios Bazigos, Alexandru Rusu, Sara Rigante, Paolo Livi

This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

Efficient Arithmetic Logic Gates Using Double-Gate Silicon Nanowire FETs, invited paper

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù

Silicon NanoWire (SiNW) based Field Effect Tran- sistors (FETs) are promising candidates to extend Moore’s law in the coming years. Recently, Double-Gate (DG) SiNWFETs have been demonstrated to allow on-line configurability of n -type and p -type device po ...

2013

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

Marion Hermersdorf

Resonators for time and frequency reference applications are essential elements found in most electronic devices surrounding us. The continuous minimization and ubiquitous distribution of such electronic devices and circuits demands for resonators of small ...

EPFL2013

Vertically stacked Si nanostructures for biosensing applications

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

High density (7-10 NW/μm) SiNW arrays of up to 16 nanowires vertically stacked with diameter widths below 20 nm have been successfully fabricated to create highly sensitive 3D FETs for biosensing applications. In order to take advantage of the increased se ...

Elsevier2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Vivek Pachauri

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

EPFL2011