Publication

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Abstract

An attractive combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)), including a relatively high spontaneous polarization and low dielectric constant as well as low processing temperature makes this material useful for studying the ferroelectric gate operation for 1T nonvolatile ferroelecetric memory applications. Here we explore a silicon-based ferroelectric field effect transistor with P(VDF-TrFE) gate showing a persistent switching of the drain current with the "on"/"off" current ratio of 10(3)-10(2) and retention exceeding 5 days. The physical mechanism of the retention loss has been addressed by monitoring the drain current relaxation in combination with the time-resolved piezo-force scanning probe microscopy. The results suggest that the retention loss is controlled by the polarization screening due to the charge injection into the interface-adjacent layer rather than the polarization loss due to the depolarization effect.

About this result
This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.