Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei
HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...
AMER INST PHYSICS2021