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Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals

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Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals

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Intrinsic defects in GaAs and In GaAs through hybrid functional calculations

Defect levels through hybrid density functionals: Insights and applications

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Structural assignments of NMR chemical shifts in GexSe1-x glasses via first-principles calculations for GeSe2, Ge4Se9, and GeSe crystals

III-nitride based microcavities

Defect levels of dangling bonds in silicon and germanium through hybrid functionals

Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition

Well surface roughness and fault density effects on the Hall mobility of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As/InP high electron mobility transistors