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Optical properties of epitaxial SrHfO3 thin films grown on Si

Related publications (34)

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Plasmonic nanohole arrays on Si-Ge heterostructures: An approach for integrated biosensors

Hatice Altug, Liza Carol Andrea Dunbar, Dordaneh Etezadi, Cenk Ibrahim Özdemir

Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible t ...

Spie-Int Soc Optical Engineering2016

Charge-transport properties of monolayer MoS2 at the interface with dielectric materials

Simone Bertolazzi

Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...

EPFL2015

Large-area MoS2 grown using H2S as the sulphur source

Philippe Gillet, Aleksandra Radenovic, Andras Kis, Duncan Thomas Lindsay Alexander, Dumitru Dumcenco, Oriol López Sánchez, Dmitry Ovchinnikov

We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate pl ...

2015

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012

Negative Capacitance Transistor

Alexandru Rusu

Silicon technology has advanced through the past four decades at exponential rate both in performance and productivity. Along with the miniaturization, the power demand grew also exponentially. New technologies are studied in order to develop switches that ...

EPFL2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Giovanni Antonio Salvatore

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Ripples and Layers in Ultrathin MoS2 Membranes

Andras Kis, Duncan Thomas Lindsay Alexander, Jacopo Brivio

Single-layer MoS2 is a newly emerging two-dimensional semiconductor with a potentially wide range of applications in the fields of nanoelectronics and energy harvesting. The fact that it can be exfoliated down to single-layer thickness, makes MoS2 interest ...

2011