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On selected GaAs laser diodes, prepared by an epitaxial solution growth method, the temperature dependence of threshold current density and the net density gradient at the p-n junction have been measured. The relationship between these two parameters has b ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...