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We report optimized precise alignment of individual single-walled carbon nanotubes (SWCNTs) by the resist-assisted AC-dielectrophoresis (DEP) method. We can reproducibly control the alignment precision to sub-50 nm by customizing the critical DEP parameters, such as: applied AC signal, trapping time, solution concentration, intrinsic properties of the CNTs and so on. The self-aligned CNT field-effect transistors (FETs) have proven to be electrically robust. Therefore, this method holds promise for bottom-up fabrication of high-quality nanoelectronic devices for digital and analog applications with high yield and uniformity.
Jürgen Brugger, Giovanni Boero, Nergiz Sahin Solmaz
Nako Nakatsuka, Mattia Petrelli
Ardemis Anoush Boghossian, Giulia Tagliabue, Sayyed Hashem Sajjadi, Alessandra Antonucci, Shang-Jung Wu, Theodoros Tsoulos, Amirmostafa Amirjani