EpitaxyEpitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.
Electrical resistivity and conductivityElectrical resistivity (also called volume resistivity or specific electrical resistance) is a fundamental specific property of a material that measures its electrical resistance or how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek letter ρ (rho). The SI unit of electrical resistivity is the ohm-metre (Ω⋅m).
Electron diffractionElectron diffraction refers to changes in the direction of electron beams due to interactions with atoms. Close to the atoms the changes are described as Fresnel diffraction; far away they are called Fraunhofer diffraction. The resulting map of the directions of the electrons far from the sample (Fraunhofer diffraction) is called a diffraction pattern, see for instance Figure 1. These patterns are similar to x-ray and neutron diffraction patterns, and are used to study the atomic structure of gases, liquids, surfaces and bulk solids.
Alternating currentAlternating current (AC) is an electric current which periodically reverses direction and changes its magnitude continuously with time, in contrast to direct current (DC), which flows only in one direction. Alternating current is the form in which electric power is delivered to businesses and residences, and it is the form of electrical energy that consumers typically use when they plug kitchen appliances, televisions, fans and electric lamps into a wall socket. A common source of DC power is a battery cell in a flashlight.
Direct currentDirect current (DC) is one-directional flow of electric charge. An electrochemical cell is a prime example of DC power. Direct current may flow through a conductor such as a wire, but can also flow through semiconductors, insulators, or even through a vacuum as in electron or ion beams. The electric current flows in a constant direction, distinguishing it from alternating current (AC). A term formerly used for this type of current was galvanic current.
Q factorIn physics and engineering, the quality factor or Q factor is a dimensionless parameter that describes how underdamped an oscillator or resonator is. It is defined as the ratio of the initial energy stored in the resonator to the energy lost in one radian of the cycle of oscillation. Q factor is alternatively defined as the ratio of a resonator's centre frequency to its bandwidth when subject to an oscillating driving force. These two definitions give numerically similar, but not identical, results.
Chemical vapor depositionChemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
Gallium nitrideGallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.
High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
Surface roughnessSurface roughness can be regarded as the quality of a surface of not being smooth and it is hence linked to human (haptic) perception of the surface texture. From a mathematical perspective it is related to the spatial variability structure of surfaces, and inherently it is a multiscale property. It has different interpretations and definitions depending from the disciplines considered. Surface roughness, often shortened to roughness, is a component of surface finish (surface texture).
