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Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs

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Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs

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First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

Band alignments and defect levels in Si-HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Electronic structure at realistic Si(100)-SiO2 interfaces

Ab initio study of interface states at metal contacts to III-IV semiconductors

Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion

Control of leakage conduction of high-fatigue-endurance (Pb, La)(Zr, Ti)O-3 film ferroelectric capacitors with Pt/SrRuO3 electrodes

Electrical characterization of Au/SiOx/n-GaAs junctions

Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study

Internally Detected Electron Photoexcitation Spectroscopy on Heterostructures

Early Stages of Schottky-Barrier Formation for Al Deposited on Gaas(110)