Noise pollutionNoise pollution, or sound pollution, is the propagation of noise or sound with ranging impacts on the activity of human or animal life, most of which are harmful to a degree. The source of outdoor noise worldwide is mainly caused by machines, transport and propagation systems. Poor urban planning may give rise to noise disintegration or pollution, side-by-side industrial and residential buildings can result in noise pollution in the residential areas.
High-κ dielectricIn the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
Noise reductionNoise reduction is the process of removing noise from a signal. Noise reduction techniques exist for audio and images. Noise reduction algorithms may distort the signal to some degree. Noise rejection is the ability of a circuit to isolate an undesired signal component from the desired signal component, as with common-mode rejection ratio. All signal processing devices, both analog and digital, have traits that make them susceptible to noise.
Roadway noiseRoadway noise is the collective sound energy emanating from motor vehicles. It consists chiefly of road surface, tire, engine/transmission, aerodynamic, and braking elements. Noise of rolling tires driving on pavement is found to be the biggest contributor of highway noise and increases with higher vehicle speeds. In developed and developing countries, roadway noise contributes a proportionately large share of the total societal noise pollution. In the U.S., it contributes more to environmental noise exposure than any other noise source.
Active noise controlActive noise control (ANC), also known as noise cancellation (NC), or active noise reduction (ANR), is a method for reducing unwanted sound by the addition of a second sound specifically designed to cancel the first. The concept was first developed in the late 1930s; later developmental work that began in the 1950s eventually resulted in commercial airline headsets with the technology becoming available in the late 1980s. The technology is also used in road vehicles, mobile telephones, earbuds, and headphones.
Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Image noiseImage noise is random variation of brightness or color information in s, and is usually an aspect of electronic noise. It can be produced by the and circuitry of a or digital camera. Image noise can also originate in film grain and in the unavoidable shot noise of an ideal photon detector. Image noise is an undesirable by-product of image capture that obscures the desired information. Typically the term “image noise” is used to refer to noise in 2D images, not 3D images.
Threshold voltageThe threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.
Metal gateA metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. They used silicon as channel material and a non-self-aligned aluminum gate.
Signal-to-noise ratioSignal-to-noise ratio (SNR or S/N) is a measure used in science and engineering that compares the level of a desired signal to the level of background noise. SNR is defined as the ratio of signal power to noise power, often expressed in decibels. A ratio higher than 1:1 (greater than 0 dB) indicates more signal than noise. SNR is an important parameter that affects the performance and quality of systems that process or transmit signals, such as communication systems, audio systems, radar systems, imaging systems, and data acquisition systems.
