Leakage mechanisms in InAlN based heterostructures
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Leakage conduction of Pt-Pb(ZrXTi:(1-X))O-3-Pt capacitors is studied by means of different measuring techniques and analyzed in terms of semiconductor properties of the system. Based on the experimental data, it is concluded that two different regimes of c ...
We applied the internal photoemission technique to the direct observation of deep levels together with barrier heights and band discontinuities at different semiconductor heterostructure interfaces. Its performances and capabilities are superior to those o ...
We explore the formation of Schottky barriers by adsorption of Ge overlayers onto single crystal Ni and Ag substrates. The results are compared to earlier results from Si-on-metal systems as well as interfaces formed by the metal-on-semiconductor depositio ...
Leakage conduction of (Pb, La)(Zr, Ti)O-3 (PLZT) films grown on Pt bottom electrode, with Pt and Pt/SrRuO3 (Pt/SRO) top electrodes is studied. It is found that the conduction behavior of the ferroelectric capacitors strongly varies depending on the degree ...
Schottky-barrier formation for Al on GaAs(110) was analyzed theoretically and with the aid of synchrotron-radiation photoemission experiments as a function of the metal coverage. For various Al-overlayer thicknesses we calculated the most stable geometries ...
The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on ...
We use the Kelvin method to study the synchrotron radiation induced surface photovoltage (SPV) on GaAs(110) as a function of metal coverage and temperature. We find that varying the temperature alone does not induce significant change in band bending in th ...
A series of events has revolutionized the research on semiconductor interfaces. One of the most interesting is the discovery that heterojunction band lineups can be modified by manipulating the interface on an atomic scale. Specifically, it has been possib ...
We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...