Anisotropic magnetoresistance of individual CoFeB and Ni nanotubes with values of up to 1.4% at room temperature
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Patterned magnetic thin films are of interest due to the potential for new technological applications and also because of their modified physical behaviour as the lateral dimensions are reduced. The functionality of patterned films can be intelligently des ...
A non-volatile random access memory (NVRAM) of the type with magnetoresistive memory elements (1) connected by sets of non-intersecting conductor sense lines (3, 4) which define the address of each memory element (1) and are connectable to a magnetic write ...
