Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode
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This paper reviews deposition, integration. and device fabrication of ferroelectric PbZrxTi1-xO3 (PZT) films for applications in microelectromechanical systems. As examples, a piezoelectric ultrasonic micromotor and pyroelectric infrared detector array are ...
Pb(Zr, Ti)O-3 (PZT) and Pb(Zr, Ti, Nb)O-3 (PNZT) thin films have been deposited on platinized silicon substrates by sputtering followed by a postannealing treatment. The Nb concentration in the films varied between 1 and 7 at. % with increments of 1 at. %. ...
This paper reviews deposition, integration, and device fabrication of PbZrxTi1-xO3 (PZT) films for applications in micro-electromechanical systems. An ultrasonic micromotor is described as an example. A summary of the published data on piezoelectric proper ...
Diverse device applications for lead zirconate titanate (PZT) ceramics in thick-film form are currently in active development. In the present study, the particle dispersion properties of thick-film ink formulations containing PZT powder have been determine ...
The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak a ...
The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...
The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...
Having a composition closed to the morphotropic phase boundary, PZT films of 14 mu m thickness with a porosity less than 7% were prepared by the double print double firing method. At room temperature the dielectric constant, remanent polarization and coerc ...
The ac field dependence of dielectric and piezoelectric response of sol-gel derived Pb(Zr,Ti)O(3)thin films is presented. The nonlinear response of dielectric polarisation and piezoelectrically induced strain at sub-switching fields was studied in terms of ...
The effective piezoelectric transverse coefficient e(31,f) was measured on various lead zirconate-titanate (PZT) and aluminum nitride thin films. The measurement set-up is based on the collection of the electric charges created by the forced deflection of ...
