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Using the highly localized current of electrons tunneling through a double barrier scanning tunneling microscope junction, we excite luminescence from a selected C60 mol. in the surface layer of fullerene nanocrystals grown on an ultrathin NaCl film on Au( ...
We have studied systems of asymmetric coupled GaAs V-groove quantum wires, in which the electrons and holes are injected into different wires. Our experimental results indicate efficient electron and hole tunneling, despite a 7 nm thick AlGaAs tunnel barri ...
We present a systematic theory of Coulomb-induced correlation effects in the nonlinear optical processes within the strong-coupling regime. In this paper, we shall set a dynamics controlled truncation scheme microscopic treatment of nonlinear parametric pr ...
We have designed a diffusion-engineered, singlephoton spectrometer in the optical-UV range using a superconducting tunnel junction. The optical photon is absorbed in a Ta film and creates excess quasiparticles. These trap into an Al tunnel junction. Intern ...
This paper presents a resist-less process for parallel fabrication of sub-micrometer Al-AlOx-Al superconducting tunnel junctions. A custom stencil is fabricated containing 200 nm low-stress SiN membranes with micro-apertures. The stencil is aligned and cla ...
This thesis reports measurements at the single atom scale by using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Different sample systems where analyzed with normal conducting and superconducting tips. Chapter 2 presents the t ...
We analyze the transport through a narrow ballistic superconductor–normal-metal–superconductor Josephson contact with nonideal transmission at the superconductor–normal-metal interfaces, e.g., due to insulating layers, effective mass steps, or band misfits ...
The Falicov–Kimball model consists of itinerant lattice fermions interacting with Ising spins by an on-site potential of strength U. Kennedy and Lieb proved that at half filling there is a low temperature phase with chessboard long range order on Zd, d \ 2 ...
In this paper we analyse a new type of silicon strain sensor based on the piezo- tunneling effect in a silicon lateral backward diode. The implantation profiles of the junction have been optimised to obtain a prevailing tunneling current at the reverse bia ...
