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A Surface Potential and Current Model for Polarity-Controllable Silicon Nanowire FETs

Related publications (33)

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MoS2 Transistors Operating at Gigahertz Frequencies

Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Dominik Sebastian Lembke, Daria Krasnozhon

The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

Amer Chemical Soc2014

FinFET integrated low-power circuits for enhanced sensing applications

Mihai Adrian Ionescu, Antonios Bazigos, Alexandru Rusu, Sara Rigante, Paolo Livi

This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

Design Methodologies and CAD for Emerging Nanotechnologies

Shashi Kanth Bobba

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Breakdown of High-Performance Monolayer MoS2

Andras Kis, Dominik Sebastian Lembke

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS2) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of ...

Amer Chemical Soc2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Klaus Kern, Hagen Klauk, Ralf Thomas Weitz, Frederik Sebastian Ante

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer t ...

2011

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Nanoengineered Silicon: Technology and Applications

Sandro Carrara, Lucia Baldi Unser

Silicon has been, and continues to be, the material support of integrated circuit (IC) technology-the enabling tool of one of the most impressive technological, industrial and social revolution of mankind. Silicon (both in monocrystalline and polycrystalli ...

2011