Large-area MoS2 grown using H2S as the sulphur source
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Perovskite nanoparticles have attracted the attention of research groups around the world for their impressive photophysical properties, facile synthesis and versatile surface chemistry. Here, we report a synthetic route that takes advantage of a suite of ...
Nanofluidic systems offer a huge potential for discovery of new molecular transport and chemical phenomena that can be employed for future technologies. Herein, we report on the transport behavior of surface-reactive compounds in a nanometer-scale flow of ...
The imaging of integrated circuits across different length scales is required for failure analysis, design validation and quality control. At present, such inspection is accomplished using a hierarchy of different probes, from optical microscopy on the mil ...
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
EPFL2019
The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...
EPFL2018
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Toward the large-area deposition of MoS2 layers, we employ metal–organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together ...
American Chemical Society2017
This thesis presents a collection of experimental results about the large-area growth of single-layer graphene and MoS2 films. In addition, we present the results of electrical characterisation of two-dimensional (2D) materials in direct current (DC) and r ...
EPFL2016
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Magnetotransmission spectroscopy was employed to study the valley Zeeman effect in large area monolayer MoS2 and MoSe2. The extracted values of the valley g factors for both A and B excitons were found to be similar with g(v) similar or equal to -4.5. The ...
Amer Physical Soc2016
In the past half-century, the semiconductor industry has relied on the scaling of complementary metal-oxide-semiconductor (CMOS) transistor dimensions and on material and geometrical innovations to increase the computational density. Approaching the end of ...
EPFL2018
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The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...
