High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2∕HfO2–Al2O3 nanolaminate∕Al2O3
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
This thesis is devoted to the study of screening and polarisation effects in a quantum plasma of electrons and protons, when the system is close to a dilute gas of hydrogen atoms. This atomic phase is obtained by considering a coupled low-density and low-t ...
Dielectric properties of perovskites are studied both to gain insight into fundamental aspects of the freezing of polar disorder, and to investigate their technological potential. The dynamics of freezing of polar disorder is investigated in single crystal ...
In this communication we address two issues essential for low-voltage memory applications of ferroelectric thin films: the size effect on polarization switching, and polarization fatigue. According to the proposed concept, both of these phenomena are contr ...
Pb(Mg1/3Nb2/3)O-3 thin films were prepared from modified alkoxide solution precursors and their dielectric and electromechanical characteristics were investigated. Preparation of the films is very sensitive to processing parameters. The influence of differ ...
The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt ...