Characterization of Surface State of Inert Particles: Case of Si and SiC
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Spectromicroscopy with the imaging technique of X-ray photoelectron emission microscopy (X-PEEM) is a microchemical analytical tool installed in many synchrotron radiation laboratories, and which is finding application in diverse fields of research. The me ...
Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacito ...
Halogenated organic compounds are common pollutants in groundwater. Consequently, there is widespread interest in understanding the reactions of these compounds in the environment and developing remediation strategies. One area of ongoing research involves ...
The electropolishing of a B-doped diamond (BDD) film deposited by CVD was studied in HOAc-H2SO4 media. The electropolished surface was characterized by SEM, XPS, and electrochem. measurements. In 1 M H2SO4 no polishing of the surface occurred even after pr ...
Interaction of liquid crystals with nanostructured surfaces is studied experimentally. Whereas photolithographic or ATM methods mere used in the past for surface structuring, we use besides photolithography essentially replication methods for the creation ...
A d.c. oxygen glow discharge was used to modify medical-grade poly(vinyl chloride) (PVC) to study how surface chemistry and hydrophilicity influence Pseudomonas aeruginosa adhesion. The effects of plasma exposure time on the resulting surface, including ch ...
We have developed an ultra-stable low temperature scanning tunneling microscope (LTSTM) for application in atomic scale spectroscopy and atom manipulation experiments. The design is based on the Besocke type microscope allowing the installation of the LTST ...
Using a first-principles approach, we assess the validity of a picture for the energetics at Si-SiO2 interfaces based on bond energies complemented with penalty energies for silicon atoms in intermediate oxidation states. By total-energy calculations on cl ...
Proton insertion in polycryst. tungsten oxide has been studied with photoelectron spectroscopy and semi-empirical calcns. The W 4f spectra show growth of W5+ and W4+ oxidn. states as a function of inserted proton content in the crystal lattice. A concomita ...