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This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
A method of obtaining a relative calibration of Si photodiodes for the spectral range of soft x rays (1-30 KeV) is presented. A simple mathematical model of the p-n diode is adopted which allows the response to be described in terms of a small set of param ...
