Focused ion beamFocused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM). However, while the SEM uses a focused beam of electrons to image the sample in the chamber, a FIB setup uses a focused beam of ions instead.
SiliconSilicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form.
Group 5 elementGroup 5 is a group of elements in the periodic table. Group 5 contains vanadium (V), niobium (Nb), tantalum (Ta) and dubnium (Db). This group lies in the d-block of the periodic table. This group is sometimes called the vanadium group or vanadium family after its lightest member; however, the group itself has not acquired a trivial name because it belongs to the broader grouping of the transition metals.
Ballistic missileA ballistic missile is a type of missile that uses projectile motion to deliver warheads on a target. These weapons are powered only during relatively brief periods—most of the flight is unpowered. Short-range ballistic missiles stay within the Earth's atmosphere, while intercontinental ballistic missiles (ICBMs) are launched on a sub-orbital flight. These weapons are in a distinct category from cruise missiles, which are aerodynamically guided in powered flight.
Potential flowIn fluid dynamics, potential flow (or ideal flow) describes the velocity field as the gradient of a scalar function: the velocity potential. As a result, a potential flow is characterized by an irrotational velocity field, which is a valid approximation for several applications. The irrotationality of a potential flow is due to the curl of the gradient of a scalar always being equal to zero. In the case of an incompressible flow the velocity potential satisfies Laplace's equation, and potential theory is applicable.
Vacuum tubeA vacuum tube, electron tube, valve (British usage), or tube (North America), is a device that controls electric current flow in a high vacuum between electrodes to which an electric potential difference has been applied. The type known as a thermionic tube or thermionic valve utilizes thermionic emission of electrons from a hot cathode for fundamental electronic functions such as signal amplification and current rectification.
GermaniumGermanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was discovered comparatively late in the discovery of the elements.
Molecular-beam epitaxyMolecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.
Orbital angular momentum of lightThe orbital angular momentum of light (OAM) is the component of angular momentum of a light beam that is dependent on the field spatial distribution, and not on the polarization. It can be further split into an internal and an external OAM. The internal OAM is an origin-independent angular momentum of a light beam that can be associated with a helical or twisted wavefront. The external OAM is the origin-dependent angular momentum that can be obtained as cross product of the light beam position (center of the beam) and its total linear momentum.
Sputter depositionSputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K).
