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Surface oxidation effect on the electrical behaviour of Bi2Te2Se nanoplatelets

Related publications (43)

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Spice Simulation of Substrate Minority Carriers Propagation with Equivalent Electrical Circuit

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This paper presents an equivalent electrical circuit for one dimensional substrate minority carriers spice simulation. The electrical circuit parameters are extracted from substrate meshing applying the finite difference method. This model is derived from ...

Ieee2014

Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

Aïcha Hessler-Wyser, Stefaan De Wolf, Bénédicte Demaurex

Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recom ...

American Institute of Physics2014

Junctionless nano-electro-mechanical resonant transistor

Mihai Adrian Ionescu, Sebastian Thimotee Bartsch

A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel (4) connecting a drain (9) and a source (10) electrode and movably fixed by at least two ends (11, 11') acting as said source and drain electrodes, respect ...

2014

Mobility engineering and a metal–insulator transition in monolayer MoS2

Andras Kis, Branimir Radisavljevic

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered mate ...

Nature Publishing Group2013

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Tunable Electroacoustic Resonators through Active Impedance Control of Loudspeakers

Romain Boulandet

The current trend for multipurpose rooms requires enhanced acoustic treatments capable to meet ever more demanding specifications in terms of performance, compactness and versatility. The reason is the variety of activities to be hosted and the correspondi ...

EPFL2012

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

Optimization of electric shunt resonant circuits for electroacoustic absorbers

Hervé Lissek, Romain Boulandet, Etienne Thierry Jean-Luc Rivet

Sound absorption can be achieved in a relatively simple manner with passive or active electroacoustic absorbers. Electroacoustic absorbers are basically loudspeakers, the membrane of which is used as an absorber/reflector of sound, and the electric termina ...

2012