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GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

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GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

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Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

MPA-SSA, design and test of a 65 nm ASIC-based system for particle tracking at HL-LHC featuring on-chip particle discrimination

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

1GigaRad TID impact on 28 nm HEP analog circuits

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs