Silicon on sapphireSilicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.
Negative resistanceIn electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it. This is in contrast to an ordinary resistor in which an increase of applied voltage causes a proportional increase in current due to Ohm's law, resulting in a positive resistance. While a positive resistance consumes power from current passing through it, a negative resistance produces power.
Silicon–germaniumSiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.
Retarded potentialIn electrodynamics, the retarded potentials are the electromagnetic potentials for the electromagnetic field generated by time-varying electric current or charge distributions in the past. The fields propagate at the speed of light c, so the delay of the fields connecting cause and effect at earlier and later times is an important factor: the signal takes a finite time to propagate from a point in the charge or current distribution (the point of cause) to another point in space (where the effect is measured), see figure below.
Electrostatic inductionElectrostatic induction, also known as "electrostatic influence" or simply "influence" in Europe and Latin America, is a redistribution of electric charge in an object that is caused by the influence of nearby charges. In the presence of a charged body, an insulated conductor develops a positive charge on one end and a negative charge on the other end. Induction was discovered by British scientist John Canton in 1753 and Swedish professor Johan Carl Wilcke in 1762.
Quantum Hall effectThe quantum Hall effect (or integer quantum Hall effect) is a quantized version of the Hall effect which is observed in two-dimensional electron systems subjected to low temperatures and strong magnetic fields, in which the Hall resistance Rxy exhibits steps that take on the quantized values where VHall is the Hall voltage, Ichannel is the channel current, e is the elementary charge and h is Planck's constant. The divisor ν can take on either integer (ν = 1, 2, 3,...) or fractional (ν = 1/3, 2/5, 3/7, 2/3, 3/5, 1/5, 2/9, 3/13, 5/2, 12/5,.
Collision resistanceIn cryptography, collision resistance is a property of cryptographic hash functions: a hash function H is collision-resistant if it is hard to find two inputs that hash to the same output; that is, two inputs a and b where a ≠ b but H(a) = H(b). The pigeonhole principle means that any hash function with more inputs than outputs will necessarily have such collisions; the harder they are to find, the more cryptographically secure the hash function is.
Insulator (electricity)An electrical insulator is a material in which electric current does not flow freely. The atoms of the insulator have tightly bound electrons which cannot readily move. Other materials—semiconductors and conductors—conduct electric current more easily. The property that distinguishes an insulator is its resistivity; insulators have higher resistivity than semiconductors or conductors. The most common examples are non-metals. A perfect insulator does not exist because even insulators contain small numbers of mobile charges (charge carriers) which can carry current.
Gravitational potentialIn classical mechanics, the gravitational potential at a point in space is equal to the work (energy transferred) per unit mass that would be needed to move an object to that point from a fixed reference point. It is analogous to the electric potential with mass playing the role of charge. The reference point, where the potential is zero, is by convention infinitely far away from any mass, resulting in a negative potential at any finite distance.
SiliconSilicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form.
