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A 64Gb/s 1.4pJ/b NRZ Optical-Receiver Data-Path in 14nm CMOS FinFET

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A long-range fast-measurement Raman-based distributed temperature sensor (RDTS) with a meter spatial resolution exploiting a quasi-periodic pulse-coding technique is proposed in this paper. We experimentally demonstrate the feasibility of temperature sensi ...

IEEE2011

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Institute of Physics2011

Several applications are pushing the development of high performance mode-locked lasers: generation of short pulses for extremely high bit rate transmission at 100 Gb/s and beyond, all-optical clock recovery at 40 Gb/s and beyond, generation of millimeter ...

2009

Recent Developments in Long Wavelength VCSELs Based on Localized Wafer Fusion

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman

We review recent results on wafer fused long wavelength VCSELs emitting in the 1310 - 2000 nm range. This technology allows reaching fundamental mode output in excess of 4.5 mW at room temperature and close to 3 mW at 70 degrees C for both the 1310 nm and ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Photosensitivity and luminescence of chromium and bismuth doped fibers

Christian Ban

Optical fiber materials with broad-band gain in the visible or in the telecommunication window are of great interest for optical communication or the biomedical domain in order to built integrated tunable lasers, amplifiers, ultra-short pulse lasers, or br ...

EPFL2009

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10-Gb/s modulation speed and transmission over 10-km SM fiber with BER < 10(-11) up to 100 degrees C temperature are achieved with optimized wafer-fused GaAs/AlGaAs-InP/InAlGaAs VCSELs incorporating re-grown tunnel junction. These VCSELs operate in the 131 ...

2009

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Vertical-cavity surface-emitting laser (VCSEL)-by-VCSEL optical injection locking to obtain high cutoff frequencies of 1.3-mu m VCSELs is demonstrated. A detailed physical explanation of the underlying mechanism is presented. VCSELs from the same wafer hav ...

2009

Being currently performed on highly complex and expensive equipments, active optical alignment of single mode 10 Gb/s transmitters and receivers is proving to be the bottleneck process for high volume manufacturing. In order to alleviate this production bu ...

Université de Neuchâtel2008

10 gbps VCSELs with high single mode output in 1310nm and 1550 nm wavelength bands

Elyahou Kapon, Alexandru Mereuta, Vladimir Iakovlev, Andrei Caliman

A new generation of 10 Gb/s wafer fused VCSELS show high single mode output in excess of 2mW at 80 degrees C (6mW at 20 degrees C) in the 1310 nm band and 1.5mW at 80 degrees C (4 mW at 20 degrees C) in the 1550 nm band. Error free transmission over 10 km ...

Optical Soc America, 2010 Massachusetts Ave Nw, Washington, Dc 20036 Usa2008

This book focuses on optical communications for short and very short distance applications and discusses the monolithic integration of optical receivers with processing elements in standard CMOS technologies. CMOS Multi-Channel Single-Chip Receivers for Mu ...

Springer2007