Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating
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We examine the injection of electron spins from ferromagnets (F) into quasi-two-dimensional electron systems (2DES’s) of semiconductors and employ the transfer-matrix formalism to obtain the carrier-density dependence of the conductances across F/InAs(2DES ...
The dielectric response in Bi4Ti3O12 single crystals was studied at subswitching conditions at relative low temperatures (20-250 degrees C) and frequencies (100 mHz to 10kHz) both in-plane and out-of-plane. Electron-holes are likely to be the major charge ...
The Hall Effect sensors are one of the most commonly used sensing technologies today. They are employed in many applications for direct magnetic field sensing and serve a multitude of low power applications within automotive and industrial electronics as c ...
The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...
In this thesis we study the electronic structure of different two-dimensional (2D) electron systems with angular resolved photoemission spectroscopy (ARPES). This technique is based on the photoelectric effect and directly probes the electronic structure o ...
We report the temperature dependence of the resistivity and thermoelectric power (TEP) under hydrostatic pressure of the itinerant antiferromagnet BaFe2As2 and the electron-doped superconductor Ba(Fe0.9Co0.1)(2)As-2. We observe a hole-like contribution to ...
Semiconductor nanowires offer a wide range of opportunities for newgenerations of nanoscale electronic and optic devices. For these applications to become reality, deeper understanding of the fundamental properties of the nanowires is required. In this the ...
Organic semiconductors are promising materials for future electronic and electroluminescence applications. A detailed understanding of organic layers and nano-sized crystals down to single molecules can address fundamental questions of contacting organic s ...
We report the results of exact-diagonalization studies of Hubbard models on a 4x4 square lattice with periodic boundary conditions and various degrees and patterns of inhomogeneity, which are represented by inequivalent hopping integrals t and t('). We foc ...
Hydrogen atoms introduced into a bulk of rare earth-transition metal compound influence the electronic structure of the material. Additional electrons are expected to change the number of free electrons per volume unit present in the system. Electron energ ...
