Elyahou Kapon, Alok Rudra, Vladimir Iakovlev, Alexei Sirbu
An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. T ...
2002