Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs
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The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral mic ...
Random defects destroy long-range phase coherence, and inhibit the metal-insulator transition in the charge density wave (CDW) system IT-TaS/sub 2/. Photoelectron spectroscopy with high resolution reveals corresponding changes in the electronic structure. ...
We exploited angle-resolved photoelectron spectroscopy (ARPES) with high energy resolution to map the band structure of the typical one-dimensional organic conductor TTF-TCNQ. We directly observe dispersing spectral features corresponding to the donor (TTF ...
Random defects destroy long-range phase coherence, and inhibit the metal-insulator transition in the charge density wave (CDW) system 1T-TaS2. Photoelectron spectroscopy with high resolution reveals corresponding changes in the electronic structure. Core l ...
A new type of material consisting of an amorphous silicon matrix, in which silicon nanoparticules are embedded, has recently been obtained. This material, named polymorphous silicon (pm-Si), exhibits enhanced transport and stability properties with respect ...
The electronic structure of cis-bis(4,4'-dicarboxy-2,2'-bipyridine)bis(isothiocyanato)ruthenium(II) and of its ligand 2,2'-bipyridine-4,4'-dicarboxylic acid was studied with electron spectroscopy. Valence level spectra were studied with respect to photoele ...
The reflectivity of TmS single crystals has been measured between 3 meV and 12 eV at room temperature and at 6 K, Besides 3p(6)-5d interband transitions a plasma edge due to free carriers is observed. In the middle infrared (near 50 meV) two sharp lines ar ...
An optoelectric radiation detector detecting short wave electromagnetic radiation, characterized by a charge transfer layer containing a hole conduction material. ...
We exploited resonant photoemission at the Ce 4d --> 4f absorption edge to investigate the Ce 4f states in CePd3. High resolution spectra reveal, near the Fermi level, the characteristic fine structure of intermediate valence Ce compounds. The spectral lin ...
We have exploited angle-resolved photoelectron spectroscopy to study changes in the quasiparticle excitations of CuO2 planes as a function of the carrier density, in optimally doped and underdoped Bi2Sr2CaCuO8+x and in Sr2CuO2Cl2. We have observed large ch ...