Ex-situ AlN seed layer for (0001)-textured Al0.84Sc0.16N thin films grown on SiO2 substrates
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Type-II GaAs/AlAs multiple-quantum well samples groan by low-pressure metal-organic vapour-phase epitaxy have been investigated. The layered structures consist of 50 periods of either 2 monolayers (ML), 4 ML. 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs ...
As screen printed contacts are the predominant metallisation technique in industrial production of Si solar cells, a better understanding of their properties is necessary. In this work, we show that high-quality cross-sectional samples can be prepared, who ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
Calcium phosphate precipitation obtained from aqueous solutions at room and body temperatures and pH 5.5-7.5 were investigated by high-resolution transmission electron microscopy (HRTEM), transmission electron diffraction, scanning electron microscopy (SEM ...
Information for phase identification may be gathered in the electron transmission microscope with spatial resolution down to the nanometre scale. Energy dispersive X-ray and electron energy loss spectrometries are based on inelastic electron/sample interac ...
Intermetallic thin films of stoichiometric NiAl and Ni3Al have been deposited onto n-type silicon (100) and nickel (110) substrates using r.f.-magnetron co-sputtering. The morphology and crystal structure of the thin films have been studied by transmission ...
Crystal damage induced by irradiation is investigated using transmission electron microscopy (TEM) coupled to molecular dynamics (MD) calculations. The displacement cascades are simulated for energies ranging from 10 to 50 keV in Al, Ni and Cu and for time ...
Electrode stability, interdiffusion, phase purity and deviation from stoichiometry at the PZT-electrode interface are key issues in PZT thin film integration. This article highlights the use of transmission electron imaging combined with energy dispersive ...
Our investigations focus on low-temperature luminescence experiments on a set of type-II GaAs/AlAs multiple-quantum-well (MQW) samples grown by low-pressure metal-organic vapor-phase epitaxy. The layered structures consists of 50 periods of either 2 monola ...